Oxide-nitride-oxide stack having multiple oxynitride layers

摘要

An embodiment of a semiconductor memory device including a multi-layer charge storing layer and methods of forming the same are described. Generally, the device includes a channel formed from a semiconducting material overlying a surface on a substrate connecting a source and a drain of the memory device; a tunnel oxide layer overlying the channel; and a multi-layer charge storing layer including an oxygen-rich, first oxynitride layer on the tunnel oxide layer in which a stoichiometric composition of the first oxynitride layer results in it being substantially trap free, and an oxygen-lean, second oxynitride layer on the first oxynitride layer in which a stoichiometric composition of the second oxynitride layer results in it being trap dense. In one embodiment, the device comprises a non-planar transistor including a gate having multiple surfaces abutting the channel, and the gate comprises the tunnel oxide layer and the multi-layer charge storing layer.

主权项

1. A memory device comprising:
an electrically conducting channel formed from a semiconducting material overlying a surface on a substrate connecting a source and a drain of the memory device; and a gate having multiple surfaces abutting the channel, the gate comprising:
a tunnel oxide layer overlying the channel; anda multi-layer charge storing layer including a first oxynitride layer closer to the tunnel oxide layer, and a second oxynitride layer, wherein the first oxynitride layer is separated from the second oxynitride layer by an anti-tunneling layer comprising an oxide,wherein the first oxynitride layer is a substantially trap free, oxygen-rich, oxynitride layer, and the second oxynitride layer is a trap dense, oxygen-lean, oxynitride layer further comprising a concentration of carbon selected to increase a number of traps therein.