| 摘要 |
<p>A method of forming a fine protuberance structure equipped with a semiconductor substrate and fine protuberances comprising a semiconductor-metal solid solution, comprising arranging fine metal particles on the semiconductor substrate, forming a coating layer on those portions of the surface of the semiconductor substrate other than the arrangement positions of the fine metal particles, and heat-treating the resultant product in a vacuum atmosphere at temperatures not less than a temperature at which the constituent atoms of the semiconductor substrate and the constituent atoms of the fine metal particles undergo solid solution due to mutual diffusion at the interface. The fine protuberances are formed in such a state where a part thereof cuts into the semiconductor substrate. The fine protuberance structure will greatly contribute to the implementation of very large-scale integrated circuit devices and quantum size devices.</p> |
