Detecting plasma arcs by monitoring RF reflected power in a plasma processing chamber

摘要

Embodiments of the present disclosure generally relate to methods for detecting unstable plasma in a substrate processing chamber. In one embodiment, the method includes providing a forward power from a power source to the substrate processing chamber through a detection device, splitting the forward power passing through the detection device at a predetermined ratio to obtain a first value of the power to the substrate processing chamber, measuring a reflected power from the substrate processing chamber to obtain a second value of the power from the substrate processing chamber, and directing the power source to turn off the forward power if the second value of the power is different than the first value of the power.

主权项

1. A method for detecting unstable plasma in a substrate processing chamber, comprising:
providing a forward power from a power source to a plasma load through a detection device disposed between the power source and the plasma load; splitting the forward power passing through the detection device at a 50-to-50% split ratio to obtain a first value of the power to the plasma load; measuring a reflected power from the plasma load by the detection device at sampling time of about nanoseconds to about 0.5 second to obtain a second value of the power from the plasma load; and directing the power source to turn off the forward power based on a predetermined condition.