SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To increase a deposition speed of a porous insulation film and improve film strength of the porous insulation film.SOLUTION: A porous insulation film is formed by: vaporizing two and more organosiloxane materials having structures different from each other, in which each organosiloxane material has an annular SiO structure as a main skeleton; and transferring the organosiloxane materials to a reacting furnace (chamber CMB) together with a carrier gas; adding oxygen atom-containing oxidant gas to form a porous insulation film in the reacting furnace (chamber CMB) by plasma CVD(Chemical Vapor Deposition) or plasma polymerization. In the above-described process, a ratio of a flow rate of the added oxidant gas to a flow rate of the carrier gas is more than 0 and not more than 0.08.SELECTED DRAWING: Figure 1