PHOTOELECTRIC CONVERSION ELEMENT, PHOTOELECTRIC CONVERSION MODULE, AND SOLAR PHOTOVOLTAIC POWER GENERATION SYSTEM

摘要

There is provided a photoelectric conversion element which can prevent the contact resistance between a non-crystalline semiconductor layer containing impurities and an electrode formed on the non-crystalline semiconductor layer from increasing, and can improve the element characteristics. A photoelectric conversion element (10) includes a semiconductor substrate (12), a first semiconductor layer (20n), a second semiconductor layer (20p), a first electrode (22n), and a second electrode (22p). The first semiconductor layer has a first conductive type. The second semiconductor layer has a second conductive type. The first electrode is formed on the first semiconductor layer. The second electrode is formed on the second semiconductor layer. The first electrode includes a first transparent conductive layer (26n) formed on the first semiconductor layer, and a first metal layer (28n) formed on the first transparent conductive layer. The first metal layer includes a plurality of metal crystal grains in which the average crystal grain size in the in-surface direction of the first metal layer is greater than the thickness of the first metal layer.

主权项

1. A photoelectric conversion element comprising:
a semiconductor substrate; a first semiconductor layer having a first conductive type; a second semiconductor layer having a second conductive type opposite to the first conductive type; a first electrode which is formed on the first semiconductor layer; and a second electrode which is formed on the second semiconductor layer, wherein the first electrode includes a first transparent conductive layer formed on the first semiconductor layer and a first metal layer formed on the first transparent conductive layer, wherein the first metal layer includes a plurality of metal crystal grains, and wherein the average crystal grain size of the metal crystal grain in the in-surface direction of the first metal layer is greater than the thickness of the first metal layer.