发明名称 WRITE DRIVER CIRCUITS FOR RESISTIVE RANDOM ACCESS MEMORY (RAM) ARRAYS
摘要 Aspects disclosed in the detailed description include write driver circuits for resistive random access memory (RAM) arrays. In one aspect, a write driver circuit is provided to facilitate writing data into a resistive RAM array in a memory system. The write driver circuit is coupled to a selector circuit configured to select a memory bitcell(s) in the resistive RAM array for a write operation. An isolation circuit is provided in the write driver circuit to couple a current source to the selector circuit to provide a write voltage during the write operation and to isolate the current source from the selector circuit when the selector circuit is not engaged in the write operation. By isolating the selector circuit from the current source when the selector circuit is on standby, it is possible to reduce leakage current in the selector circuit, thus reducing standby power consumption in the memory system.
申请公布号 US2016267959(A1) 申请公布日期 2016.09.15
申请号 US201514644631 申请日期 2015.03.11
申请人 QUALCOMM Incorporated 发明人 Kim Jung Pill;Kim Sungryul;Kim Taehyun
分类号 G11C11/16 主分类号 G11C11/16
代理机构 代理人
主权项 1. A write driver circuit for writing data to a resistive random access memory (RAM) array, comprising: an isolation circuit coupled to: a current source; anda selector circuit configured to select one or more resistive RAM bitcells in a resistive RAM array for a write operation; wherein the isolation circuit is configured to: receive a control signal;couple the current source to the selector circuit to provide a write voltage to the one or more resistive RAM bitcells selected by the selector circuit if the control signal indicates a write state for the write operation; anddecouple the current source from the selector circuit if the control signal does not indicate the write state.
地址 San Diego CA US