发明名称 Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the thin film transistor
摘要 A thin film transistor (TFT), a method of fabricating the same, and an organic light emitting diode (OLED) display device having the TFT. The TFT includes: a substrate; a polycrystalline silicon (poly-Si) semiconductor layer disposed on the substrate, including source, drain, and channel regions, a crystallization-inducing metal, first gettering sites disposed on opposing edges of the semiconductor layer, and a second gettering site spaced apart from the first gettering sites; a gate insulating layer disposed on the semiconductor layer; a gate electrode disposed on the gate insulating layer; an interlayer insulating layer disposed on the gate electrode; and source and drain electrodes disposed on the interlayer insulating layer and electrically connected to the source and drain regions of the semiconductor layer.
申请公布号 US8253141(B2) 申请公布日期 2012.08.28
申请号 US20090502413 申请日期 2009.07.14
申请人 PARK BYOUNG-KEON;SEO JIN-WOOK;YANG TAE-HOON;LEE KIL-WON;SAMSUNG MOBILE DISPLAY CO., LTD. 发明人 PARK BYOUNG-KEON;SEO JIN-WOOK;YANG TAE-HOON;LEE KIL-WON
分类号 H01L29/76;H01L27/01;H01L29/04;H01L31/036;H01L31/0376 主分类号 H01L29/76
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