| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can selectively etch any of a plurality of silicon oxide films of different types.SOLUTION: According to one embodiment, a semiconductor device manufacturing method includes the steps of: forming on a substrate, a first silicon oxide film having a first carbon content; forming on the first silicon oxide film, a second silicon oxide film having a second carbon content different form the first carbon content; and selectively etching the first or second silicon oxide film by using a bromine-or-chlorine-containing gas.SELECTED DRAWING: Figure 2 |
