Method and apparatus for controlling a gate voltage in high electron mobility transistor

摘要

According to example embodiments, a method for controlling a gate voltage applied to a gate electrode of a high electron mobility transistor (HEMT) may include measuring a voltage between a drain electrode and a source electrode of the HEMT, and adjusting a level of the gate voltage applied to the gate electrode of the HEMT according to the measured voltage. The level of the gate electrode may be adjusted if the voltage between the drain electrode and the source electrode is different than a set value.

主权项

1. A method of controlling a gate voltage applied to a gate electrode of a high electron mobility transistor (HEMT), the method comprising:
measuring a voltage between a drain electrode and a source electrode of the HEMT; and adjusting a level of the gate voltage applied to the gate electrode of the HEMT according to the measured voltage; wherein, if the measured voltage between the drain electrode and the source electrode is higher than a set value, the adjusting the level of the gate voltage includes increasing the level of the gate voltage applied to the gate electrode until the voltage between the drain electrode and the source electrode reaches the set value, wherein the set value is a voltage level between the drain electrode and the source electrode at which current collapse in the HEMT is reduced.