| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device increasing bonding strength between pads and a wire, while having a strong structure against stress acting on the pads. <P>SOLUTION: An interconnect line formed on a chip is connected with pads 3a to 3d arranged on the both sides of an interlayer film that are joined with a bonding wire 6 through contacts 9. The contacts 9 are densely arranged in the periphery and center section of the pads 3a to 3d. <P>COPYRIGHT: (C)2007,JPO&INPIT |
