| 摘要 |
PROBLEM TO BE SOLVED: To prevent dishing of a metal wiring. SOLUTION: As shown in figure (a), a hollow 9a of the surface of a metal wiring film 9 is filled with a polishing rate adjustment film 10 whose polishing rate in a CMP(chemical-mechanical polishing) process is lower than that of the metal wiring film 9 and further is higher than that of a barrier metal film 7, so as to make the surface of the metal wiring film 9 almost flat. Then the CMP process is performed to chemically and physically polish the metal wiring film 9 and the polishing rate adjustment film 10. When the removal of the barrier metal film 7 on the outside of a recessed part 5 is finished and a surface 4a of an insulation film 4 on the outside of the recessed part 5 is exposed, the CMP process is finished. At this time, as shown in figure (c), the surface 4a of the insulation film 4 on the outside of the recessed part 5 is almost flush with the surface of the metal wiring film 9, thereby a secondary metal wiring 11 having a flat surface is obtained.
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