| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device in which crystal defect generation is prevented. SOLUTION: An ion implantation process 110 of impurity ions, an ion implantation process 120 of Si+ ions and a heat treatment process 130 are performed in this order in a wafer treatment process 100 for an Si substrate. In the ion implantation process 110, impurity ions are introduced to the Si substrate through the ion implantation of a projection range Rp1. In the ion implantation process 120, Si+ ions are introduced to the Si substrate that were subjected to the ion implantation process 110, with the ion implantation of a projection range Rp2 being smaller than the projection range Rp1. In the heat treatment process 130, heat treatment is performed on the Si substrate that has been subjected to the ion implantation process 110 and the ion implantation process 120. As a result, in the wafer treatment processing 100, the Si+ ions introduced at the ion implantation processing 120 are bonded to a vacant lattice defects, produced in the ion implantation process 110, thereby crystal defect generation caused by the vacant lattice defect is prevented.
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