发明名称 |
STRUCTURE HAVING OXIDE LAYER, PRODUCTION METHOD FORTHE STRUCTURE, AND CAPACITOR AND FILTER USING THE STRUCTURE |
摘要 |
A structure which can be applied to dielectric materials, and various electronic devices using the materials, especially capacitors and filters using the materials, and which has a substrate and an oxide layer; and a production method for the structure. A large-area oxide layer or dielectric layer which can be produced at low costs, the dielectric layer thus obtained having such a performance that an oxide coating thereof is comparable to that prepared by a single crystal; a production method thereof; and a structure having an oxide layer or a dielectric layer that is high in adhesion to a substrate and free from cracks otherwise caused by a thermal shock test. A structure comprising a substrate and an oxide layer formed on the substrate, wherein the oxide layer has first metal oxide, the oxide has crystallinity, and the substrate and the oxide layer have adhesion to each other that survives a thermal shock test of repeating 1000 times a heat history of maintaining them at 10 DEG C for one hour and then at +80 DEG C for one hour.
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申请公布号 |
WO02062569(A1) |
申请公布日期 |
2002.08.15 |
申请号 |
WO2002JP00708 |
申请日期 |
2002.01.30 |
申请人 |
CENTER FOR ADVANCED SCIENCE AND TECHNOLOGY INCUBATION, LTD.;RENGAKUJI, SEICHI |
发明人 |
RENGAKUJI, SEICHI |
分类号 |
H01G4/10;(IPC1-7):B32B9/00;H01P1/203 |
主分类号 |
H01G4/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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