发明名称 Method of manufacturing a thin film transistor substrate and stripping composition
摘要 A method of manufacturing a thin film transistor substrate includes forming a transistor thin layer pattern, forming a protecting layer, forming a photoresist film, forming a pixel electrode and a conductive layer that are separated from each other, stripping a photoresist pattern to remove the conductive layer using a stripping composition and dissolving the conductive layer. The method of manufacturing a thin film transistor substrate is capable of improving an efficiency of manufacturing process of the thin film transistor substrate. In addition, the stripping composition is recycled.
申请公布号 US7300827(B2) 申请公布日期 2007.11.27
申请号 US20050215140 申请日期 2005.08.30
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK HONG-SICK;KIM SHI-YUL;CHOUNG JONG-HYUN;SHIN WON-SUK
分类号 H01L21/00;H01L21/84 主分类号 H01L21/00
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