| 发明名称 |
Integrated High-K/Metal Gate in CMOS Process Flow |
| 摘要 |
A method of fabricating a semiconductor device includes providing a semiconductor substrate having a first region and a second region, forming a first dielectric layer over the semiconductor substrate, forming a first metal layer over the first dielectric layer, the first metal layer having a first work function, removing at least a portion of the first metal layer in the second region, and thereafter, forming a semiconductor layer over the first metal layer in the first region and over the at least partially removed first metal layer in the second region. The method further includes removing the semiconductor layer and forming a second metal layer on the first metal layer in the first region and on the at least partially removed first metal layer in the second region, the second metal layer having a second work function that is different than the first work function. |
| 申请公布号 |
US2016293490(A1) |
申请公布日期 |
2016.10.06 |
| 申请号 |
US201615010306 |
申请日期 |
2016.01.29 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Chen Ryan Chia-Jen;Lin Jr-Jung;Chen Chien-Hao;Chen Yi-Hsing;Huang Kuo-Tai;Lin Yih-Ann;Mor Yi-Shien |
| 分类号 |
H01L21/8238;H01L27/092;H01L29/51;H01L29/06;H01L29/423;H01L29/49;H01L29/40;H01L21/28 |
主分类号 |
H01L21/8238 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of fabricating a semiconductor device comprising:
providing a semiconductor substrate having a first region and a second region; forming a first dielectric layer over the semiconductor substrate; forming a first metal layer over the first dielectric layer, the first metal layer having a first work function; removing at least a portion of the first metal layer in the second region; thereafter, forming a semiconductor layer over the first metal layer in the first region and over the at least partially removed first metal layer in the second region; removing the semiconductor layer; and forming a second metal layer on the first metal layer in the first region and on the at least partially removed first metal layer in the second region, the second metal layer having a second work function that is different than the first work function. |
| 地址 |
Hsin-Chu TW |
