Transistor devices with tapered suspended vertical arrays of carbon nanotubes

摘要

A transistor device includes an array of fin structures arranged on a substrate, each of the fin structures being vertically alternating stacks of a first isoelectric point material having a first isoelectric point and a second isoelectric point material having a second isoelectric point that is different than the first isoelectric point; one or more carbon nanotubes (CNTs) suspended between the fin structures and contacting a side surface of the second isoelectric point material in the fin structures; a gate wrapped around the array of CNTs; and source and drain contacts arranged over the fin structures; wherein each of the fin structures have a trapezoid shape or parallel sides that are oriented about 90° with respect to the substrate.

主权项

1. A transistor device, comprising:
a source and a drain arranged on a substrate; an array of carbon nanotubes (CNTs) suspended between the source and the drain, the array of CNTs comprising vertically stacked CNTs having first ends anchored in the source and second ends anchored in the drain, and the array of CNTs being stacked in a tapered orientation with respect to an axis perpendicular to the substrate.