| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming an alignment mark for highly precisely performing the photolithography of a wiring film. <P>SOLUTION: A dishing prevention film 103 for preventing the dishing of a region where an alignment mark is formed is formed so that a region as a groove 105 of the alignment mark can be surrounded on a substrate 101. An inter-layer insulating film 104 is formed on the substrate so that the dishing prevention film 103 can be covered. The surface of the inter-layer insulating film 104 is ground by a chemical/mechanical grounding method. The groove 105 of the alignment mark is formed in the inter-layer insulating film 104. A wiring layer 107 is formed on the inter-layer insulating film 104 so that a groove as a mark can be formed on the surface of the wiring film 107 in the section of the mark 105 of the alignment mark. Thus, the alignment mark as a groove is formed on the surface of the wiring film 107. <P>COPYRIGHT: (C)2007,JPO&INPIT |
