HIGH DENSITY INTERCONNECTION OF MICROELECTRONIC DEVICES

摘要

A microelectronic package of the present description may comprises a first microelectronic device having at least one row of connection structures electrically connected thereto and a second microelectronic device having at least one row of connection structures electrically connected thereto, wherein the connection structures within the at least one first microelectronic device row are aligned with corresponding connection structures within the at least one second microelectronic device row in an x-direction. An interconnect comprising an interconnect substrate having a plurality of electrically isolated conductive traces extending in the x-direction on a first surface of the interconnect substrate may be attached to the at least one first microelectronic device connection structure row and the at least one second microelectronic device connection structure row, such that at least one interconnect conductive trace forms a connection between a first microelectronic device connection structure and its corresponding second microelectronic device connection structure.

主权项

1. A microelectronic package comprising:
a first microelectronic device having an active surface, an opposing back surface, at least one side, and at least one row of connection structures formed on the active surface; a second microelectronic device having an active surface, an opposing back surface, at least one side, and at least one row of connection structures formed on the active surface; wherein the at least one side of the first microelectronic device abuts the at least one side of the second microelectronic device, and wherein at least one connection structure within the at least one first microelectronic device row is aligned with a corresponding connection structure within the at least one second microelectronic device row in an x-direction; and an interconnect comprising an interconnect substrate having a plurality of electrically isolated conductive traces extending in the x-direction on a first surface of the interconnect substrate, wherein the interconnect is attached to the at least one first microelectronic device connection structure row and at least one second microelectronic device connection structure row, such that at least one interconnect conductive trace forms a connection between a first microelectronic device connection structure and its corresponding second microelectronic device connection structure.