发明名称 |
Nanostructure semiconductor light-emitting device |
摘要 |
A nanostructure semiconductor light-emitting device includes a base layer formed of a first conductivity-type semiconductor, a first material layer disposed on the base layer and including a plurality of openings, a plurality of light-emitting nanostructures, each of which extends through each of the plurality of openings and includes a nanocore formed of a first conductivity-type semiconductor, an active layer and a second conductivity-type semiconductor shell layer, sequentially disposed on the nanocore, a filling layer disposed on the first material layer, wherein the filling layer fills spaces between the plurality of light-emitting nanostructures and a portion of each of the plurality of light-emitting nanostructures is exposed by the filling layer, a second conductivity-type semiconductor extension layer disposed on the filling layer and covering the exposed portion of each of the plurality of light-emitting nanostructures, and a contact electrode layer disposed on the second conductivity-type semiconductor extension layer. |
申请公布号 |
US9490395(B2) |
申请公布日期 |
2016.11.08 |
申请号 |
US201514630431 |
申请日期 |
2015.02.24 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
Hwang Kyung Wook;Kim Jung Sung;Cha Nam Goo |
分类号 |
H01L29/06;H01L33/24;H01L33/08;H01L33/18;H01L33/38;H01L33/46;H01L33/02 |
主分类号 |
H01L29/06 |
代理机构 |
Lee & Morse, P.C. |
代理人 |
Lee & Morse, P.C. |
主权项 |
1. A nanostructure semiconductor light-emitting device, comprising:
a base layer formed of a first conductivity-type semiconductor; a first material layer disposed on the base layer and including a plurality of openings; a plurality of light-emitting nanostructures, each of which extends through each of the plurality of openings and includes a nanocore formed of a first conductivity-type semiconductor, an active layer and a second conductivity-type semiconductor shell layer, sequentially disposed on the nanocore; a filling layer disposed on the first material layer, wherein the filling layer fills spaces between the plurality of light-emitting nanostructures and a portion of each of the plurality of light-emitting nanostructures is exposed by the filling layer; a second conductivity-type semiconductor extension layer disposed on the filling layer and covering the exposed portion of each of the plurality of light-emitting nanostructures; and a contact electrode layer disposed on the second conductivity-type semiconductor extension layer. |
地址 |
Suwon-Si, Gyeonggi-Do KR |