| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid state image sensor in which multi-pixel and a large screen can be realized by reducing propagation delay, and to provide its fabrication process. SOLUTION: Transfer electrodes 11 and 12 at a charge transfer section 3 are composed of polysilicon 4 and 5 in the same layer, and high melting point metal silicide 6 is formed on a part of the polysilicon 4 and 5 between light receiving sections 2 in the direction at least parallel with the charge transfer section 3 thus constituting a solid state image sensor 1. The solid state image sensor 1 is fabricated through a step for forming an opening in a part of an insulating film on the polysilicon films 4 and 5 between the light receiving sections 2 in the direction at least parallel with the charge transfer section 3, a step for forming a high melting point metal film and causing reaction between the high melting point metal film and the polysilicon films 4 and 5 below the opening through heat treatment to form high melting point metal silicide 6, a step for removing nonreaction high melting point metal film, and a step for forming an insulating film to cover the polysilicon films 4 and 5 and the high melting point metal silicide 6. COPYRIGHT: (C)2005,JPO&NCIPI
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