Semiconductor device

摘要

An object is to provide a highly reliable transistor and a semiconductor device including the transistor. A semiconductor device including a gate electrode; a gate insulating film over the gate electrode; an oxide semiconductor film over the gate insulating film; and a source electrode and a drain electrode over the oxide semiconductor film, in which activation energy of the oxide semiconductor film obtained from temperature dependence of a current (on-state current) flowing between the source electrode and the drain electrode when a voltage greater than or equal to a threshold voltage is applied to the gate electrode is greater than or equal to 0 meV and less than or equal to 25 meV, is provided.

主权项

1. A semiconductor device comprising:
a substrate; and a transistor over the substrate, the transistor comprising:
a gate electrode over the substrate;a gate insulating film over the gate electrode;an oxide semiconductor film over the gate insulating film;a source and a drain over the oxide semiconductor film; andan insulating film over the oxide semiconductor film, wherein the transistor has a characteristic that an on-state current of the transistor is substantially constant in environments at −25° C. to 150° C.