| 发明名称 |
SUBSTRATE COMPRISING AN EMBEDDED CAPACITOR |
| 摘要 |
A substrate that includes a first dielectric layer and a capacitor embedded in the first dielectric layer. The capacitor includes a base portion, a first terminal and a second terminal. The first terminal is located on a first surface of the base portion, where the first terminal is the only terminal on the first surface of the base portion. The second terminal is located on a second surface of the base portion. The second surface is opposite to the first surface. The second terminal is the only terminal on the second surface of the base portion. In some implementations, the capacitor further includes a first base metal layer located between the first surface of the base portion and the first terminal. In some implementations, the capacitor also includes a second base metal layer located between the second surface of the base portion and the second terminal. |
| 申请公布号 |
US2016183379(A1) |
申请公布日期 |
2016.06.23 |
| 申请号 |
US201414579735 |
申请日期 |
2014.12.22 |
| 申请人 |
QUALCOMM Incorporated |
发明人 |
Song Young Kyu;We Hong Bok;Hwang Kyu-Pyung |
| 分类号 |
H05K1/18;H05K3/32 |
主分类号 |
H05K1/18 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A substrate comprising:
a first dielectric layer; and a capacitor embedded in the first dielectric layer, the capacitor comprising:
a base portion;a first terminal located on a first surface of the base portion, wherein the first terminal is the only terminal on the first surface of the base portion; anda second terminal located on a second surface of the base portion, the second surface opposite to the first surface, wherein the second terminal is the only terminal on the second surface of the base portion. |
| 地址 |
San Diego CA US |
