| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which suppresses or prevents generation of a two-dimensional electron gas in a buffer layer.SOLUTION: A semiconductor device HEMT 100 includes: a substrate 1; and a buffer layer 40 in which first layers 20 each composed of a group 3 nitride and second layers 30 each arranged on the first layer and composed of a group 3 nitride are alternately arranged on the substrate 1, in which strained lattice spacing in the second layer 30 is smaller than lattice spacing in a state where a material which composes the second layer 30 is relaxed.SELECTED DRAWING: Figure 1 |
