Super junction trench power MOSFET device fabrication

摘要

Methods of fabricating a super junction trench power MOSFET (metal oxide semiconductor field effect transistor) device are described. A column of p-type dopant in the super junction is separated from a first column of n-type dopant by a first column of oxide and from a second column of n-type dopant by a second column of oxide. In an n-channel device, a gate element for the FET is advantageously situated over the column of p-type dopant; and in a p-channel device, a gate element for the FET is advantageously situated over the column of n-type dopant.

主权项

1. A method of fabricating a super junction trench power metal oxide semiconductor field effect transistor (MOSFET) device having a channel of a first type dopant, said method comprising:
forming a column of second type dopant on a substrate of said first type dopant, wherein said substrate is adjacent to a drain electrode; depositing a layer of oxide on said substrate and on opposite sides of said column of said second type dopant to form a first column of oxide on said substrate and a second column of oxide on said substrate; forming a first column of said first type dopant on and in contact with said substrate and adjacent said first column of oxide and forming a second column of said first type dopant on and in contact with said substrate and adjacent said second column of oxide, said column of said second type dopant separated from said first and second columns of said first type dopant by said first and second columns of oxide; forming a gate element for a field effect transistor between said first column of said first type dopant and said second column of said first type dopant and above said column of said second type dopant; forming a body region of said second type dopant and forming a source region of said first type dopant adjacent to said gate element; forming a trench that extends in said first column of said first type dopant, wherein said trench extends through said source region and into said body region; implanting a region of said second type dopant between said trench and said first column of said first type dopant, said region in contact with both said trench and said first column of said first type dopant and said region separating said trench from said first column of said first type dopant; and depositing source metal to fill said trench, wherein said region of said second type dopant is in contact with said source metal in said trench and separates said source metal in said trench from said first column of said first type dopant, and wherein said body region and said source region are exposed to and in contact with said source metal in said trench.