| 发明名称 | Photoelectric conversion device | ||
| 摘要 | It is an object of the present invention to improve photoelectric conversion efficiency in a photoelectric conversion device. The photoelectric conversion device according to the present invention uses a polycrystalline semiconductor layer including a plurality of semiconductor particles coupled together as a light-absorbing layer, each of the semiconductor particles including a group I-III-VI compound, each of the semiconductor particles having a higher composition ratio PI of a group I-B element to a group III-B element in a surface portion thereof than that in a central portion thereof. | ||
| 申请公布号 | US9484476(B2) | 申请公布日期 | 2016.11.01 |
| 申请号 | US201214007897 | 申请日期 | 2012.03.15 |
| 申请人 | KYOCERA CORPORATION | 发明人 | Kubo Shintaro;Kikuchi Michimasa;Asao Hideaki;Ushio Shinnosuke |
| 分类号 | H01L31/032;H01L31/0368;H01L31/0749;H01L31/046 | 主分类号 | H01L31/032 |
| 代理机构 | Procopio Cory Hargreaves and Savitch LLP | 代理人 | Procopio Cory Hargreaves and Savitch LLP |
| 主权项 | 1. A photoelectric conversion device wherein a polycrystalline semiconductor layer, including a plurality of semiconductor particles coupled together and a group III-B element included at a grain boundary of each of the semiconductor particles, is used as a light-absorbing layer, wherein each of the semiconductor particles includes a group I-III-VI compound, and wherein, in each of the plurality of semiconductor particles, a surface portion of the semiconductor particle has a higher composition ratio PI of a group I-B element to a group III-B element than a central portion of the semiconductor particle. | ||
| 地址 | Kyoto JP | ||