Semiconductor device and manufacturing method thereof

摘要

A semiconductor device and manufacturing method thereof. Various aspects of the disclosure may, for example, comprise forming a back end of line layer on a dummy substrate, completing at least a first portion of an assembly, and removing the dummy substrate.

主权项

1. A method of manufacturing a semiconductor device, the manufacturing method comprising:
mounting and electrically connecting a semiconductor die to a back end of line (BEOL) layer on a dummy substrate; after said mounting and electrically connecting, first encapsulating a first side of the BEOL layer and at least side surfaces of the semiconductor die using a first encapsulant; after said first encapsulating, removing the dummy substrate from the BEOL layer; after said first encapsulating, forming a redistribution layer on a side of the first encapsulant opposite the BEOL layer, wherein the redistribution layer comprises an RDL dielectric layer and an RDL conductive layer that is electrically connected to the BEOL layer; electrically connecting a conductive ball to the BEOL layer; second encapsulating a second side of the BEOL layer opposite the first side and the conductive ball using a second encapsulant; and forming a conductive pillar that passes completely through the first encapsulant, wherein the conductive pillar has a height equal to a height of the semiconductor die.