| 发明名称 |
SEMICONDUCTOR DEVICE HAVING A LOW DIELECTRIC FILM AND FABRICATION PROCESS THEREOF |
| 摘要 |
<p>A method of fabricating a semiconductor device includes the step of depositing a second insulating film on a first insulating film, patterning the second insulating film to form an opening therein, and etching the first insulating film while using the second insulating film as an etching mask, wherein a low-dielectric film is used for the second insulating film.</p> |
| 申请公布号 |
WO0184626(A1) |
申请公布日期 |
2001.11.08 |
| 申请号 |
WO2001JP03618 |
申请日期 |
2001.04.26 |
| 申请人 |
TOKYO ELECTRON LIMITED;MAEKAWA, KAORU;SUGIURA, MASAHITO |
发明人 |
MAEKAWA, KAORU;SUGIURA, MASAHITO |
| 分类号 |
H01L23/522;H01L21/312;H01L21/316;H01L21/60;H01L21/768;H01L23/532;(IPC1-7):H01L21/768 |
主分类号 |
H01L23/522 |
| 代理机构 |
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