| 摘要 |
A method for forming an isolation layer in a semiconductor device is provided to minimize the compression stress at edge portions of the isolation layer by forming a nitride layer between a gap-fill oxide layer and a liner oxide layer. A trench(40) is formed in a semiconductor substrate(30). A liner oxide layer(42) is formed at inner walls of the trench. A gap-fill oxide layer is formed on the resultant structure to fill the trench, and the surface of the liner oxide layer is simultaneously treated by nitridation processing, thereby forming a nitride layer(44) between the liner oxide layer and the gap-fill oxide layer. An isolation layer(46a) is formed by planarizing the gap-fill oxide layer.
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