发明名称 |
PROCESS FOR PRODUCING GROUP III ELEMENT NITRIDE CRYSTAL |
摘要 |
A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel. |
申请公布号 |
EP2071062(A1) |
申请公布日期 |
2009.06.17 |
申请号 |
EP20080720330 |
申请日期 |
2008.03.05 |
申请人 |
PANASONIC CORPORATION |
发明人 |
YAMADA, OSAMU;MINEMOTO, JISASHI;HIRANAKA, KOUICHI;HATAKEYAMA, TAKESHI;SASAKI, TAKATOMO;MORI, YUSUKE;KAWAMURA, FUMIO;KITAOKA, YASUO |
分类号 |
C30B29/40;C30B9/10;C30B11/12;C30B19/02;H01L33/32 |
主分类号 |
C30B29/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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