Verfahren zur Herstellung von dotierten Halbleitergebieten in einem Halbleiterkörper eines lateralen Trenchtransistors

摘要

Lateral trench transistor (200) has a body region (4) inside which a semiconductor region (10) is provided adjoining to it. The semiconductor region is electrically connected with the source contact (12) and its type of endowment corresponds to the type of endowment of body region. An independent claim is also included for a method for manufacturing of endowed semiconductor region.