发明名称 Semiconductor memory device receiving multiple commands simultaneously and memory system including the same
摘要 A semiconductor memory device may include: a memory cell array; a first address controller configured to receive a first command and a first address and generate a first control signal in response to the first command; and a second address controller configured to receive a second address and a second command inputted at the same time as the first command, and generate a second control signal in response to the second command.
申请公布号 US9368175(B2) 申请公布日期 2016.06.14
申请号 US201414493026 申请日期 2014.09.22
申请人 SK Hynix Inc. 发明人 Lee Dong-Uk
分类号 G11C8/18;G11C7/22;G11C8/12 主分类号 G11C8/18
代理机构 IP & T Group LLP 代理人 IP & T Group LLP
主权项 1. A semiconductor memory device comprising: a memory cell array; a first address controller configured to receive a first command and a first address and generate a first control signal in response to the first command; and a second address controller configured to receive a second address and a second command inputted at the same time as the first command, and generate a second control signal in response to the second command.
地址 Gyeonggi-do KR