发明名称 Current generation circuit and semiconductor device having the same
摘要 A current generation circuit includes a mirroring circuit suitable for being charged by using a bias voltage, wherein a voltage level of the charged voltage varies corresponding to changes in a voltage level of a power voltage, a comparison circuit suitable for comparing the charged voltage with a feedback voltage, and a current driving circuit suitable for generating a current based on a voltage output from the comparison circuit.
申请公布号 US9368165(B2) 申请公布日期 2016.06.14
申请号 US201414161263 申请日期 2014.01.22
申请人 SK Hynix Inc. 发明人 Jin Hyun Jong
分类号 G11C5/14;H03K17/06 主分类号 G11C5/14
代理机构 IP & T Group LLP 代理人 IP & T Group LLP
主权项 1. A current generation circuit, comprising: a mirroring circuit suitable for charging a voltage, wherein a level of a charged voltage by the mirroring circuit varies in response to changes in a level of a power voltage; a comparison circuit suitable for comparing the charged voltage with a feedback voltage, wherein the comparison circuit includes an operational amplifier having a first input terminal to which the charged voltage is applied and a second input terminal to which the feedback voltage is applied; and a current driving circuit suitable for generating a current based on a voltage output from the comparison circuit, wherein the mirroring circuit, the comparison circuit and the current driving circuit receive the power voltage being supplied from the same voltage source, and the charged voltage, the feedback voltage and the voltage output from the comparison circuit are varied at the same time.
地址 Gyeonggi-do KR