COMPOUND SEMICONDUCTOR DEVICES HAVING BURIED RESISTORS FORMED IN BUFFER LAYER

摘要

Structures and methods are provided for fabricating a semiconductor device (e.g., III-V compound semiconductor device) having buried resistors formed within a buffer layer of the semiconductor device. For instance, a semiconductor device includes a buffer layer disposed on a substrate, a channel layer disposed on the buffer layer, and a buried resistor disposed within the buffer layer. The buffer and channel layers may be formed of compound semiconductor materials such as III-V compound semiconductor materials. Utilizing the buffer layer of a compound semiconductor structure to form buried resistors provides a space-efficient design with increased integration density since the resistors do not have to occupy a large amount of space on the active surface of a semiconductor integrated circuit chip.

主权项

1. A method for fabricating a semiconductor device, comprising:
forming a buffer layer on a substrate; forming a channel layer on the buffer layer; and forming a buried resistor within the buffer layer.