SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC EQUIPMENT

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device that can be highly integrated. SOLUTION: The semiconductor device comprises a thin-film transistor 1, and a multilayer wiring structure 2 electrically connected to the thin-film transistor 1. In this case, the multilayer wiring structure 2 has a first wiring layer 11a provided in the same layer as a semiconductor layer 11 of the thin-film transistor 1. COPYRIGHT: (C)2005,JPO&NCIPI