| 摘要 |
The disclosure relates to a method for producing a microelectronic device including a plurality of Si<SUB>1-y</SUB>Ge<SUB>y </SUB>based semi-conducting zones (where 0<y<=1) which have different respective Germanium contents, comprising the steps of: a) formation on a substrate covered with a plurality of Si<SUB>1-y</SUB>Ge<SUB>y </SUB>based semi-conducting zones (where 0<x<1 and x<y) and identical compositions, of at least one mask comprising a set of masking blocks, wherein the masking blocks respectively cover at least one semi-conducting zone of the said plurality of semi-conducting zones, wherein several of said masking blocks have different thicknesses and/or are based on different materials, b) oxidation of the semi-conducting zones of the said plurality of semi-conducting zones through said mask.
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