发明名称 |
Semiconductor structure having a center dummy region |
摘要 |
A semiconductor structure is provided, including a substrate, a plurality of first semiconductor devices, a plurality of second semiconductor devices, and a plurality of dummy slot contacts. The substrate has a device region, wherein the device region includes a first functional region and a second functional region, and a dummy region is disposed therebetween. The first semiconductor devices and a plurality of first slot contacts are disposed in the first functional region. The second semiconductor devices and a plurality of second slot contacts are disposed in the second functional region. The dummy slot contacts are disposed in the dummy region. |
申请公布号 |
US9412745(B1) |
申请公布日期 |
2016.08.09 |
申请号 |
US201514620212 |
申请日期 |
2015.02.12 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Hung Ching-Wen;Wu Jia-Rong;Lee Yi-Hui;Huang Chih-Sen;Chen Yi-Wei |
分类号 |
H01L29/66;H01L27/32;H01L27/11;H01L29/78;H01L29/06;H01L23/535 |
主分类号 |
H01L29/66 |
代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
主权项 |
1. A semiconductor structure, comprising:
a substrate with a device region, wherein the device region is a memory region, wherein the device region comprises a first functional region and a second functional region, and a dummy region is disposed therebetween, wherein the first functional region is a memory cell region; a plurality of first semiconductor devices and a plurality of first slot contacts disposed in the first functional region, wherein a plurality of fin structures stretching along a first direction and a plurality of gate structures stretching along a second direction are disposed in the first functional region, intersecting with each other, thereby forming the plural first semiconductor devices; a plurality of second semiconductor devices and a plurality of second slot contacts disposed in the second functional region; and a plurality of dummy slot contacts disposed in the dummy region. |
地址 |
Hsin-Chu TW |