发明名称 NBT-BT crystal piezoelectric film and piezoelectric stacking structure comprising the same
摘要 The present invention provides an NBT-BT film having a higher polarization-disappearance temperature. The present invention is a [(Na,Bi)1-xBax]TiO3 crystal piezoelectric film. The [(Na,Bi)1-xBax]TiO3 crystal piezoelectric film has a (001) orientation only. The [(Na,Bi)1-xBax]TiO3 crystal piezoelectric film has a-axis length of not less than 0.390 nanometers and not more than 0.395 nanometers. The [(Na,Bi)1-xBax]TiO3 crystal piezoelectric film has c-axis length of not less than 0.399 nanometers and not more than 0.423 nanometers (where x represents a value of not less than 0 and not more than 1). The [(Na,Bi)1-xBax]TiO3 crystal piezoelectric film has a polarization-disappearance temperature of not less than 389 degrees Celsius.
申请公布号 US9482688(B2) 申请公布日期 2016.11.01
申请号 US201414322780 申请日期 2014.07.02
申请人 PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD. 发明人 Tanaka Yoshiaki;Hashimoto Kazuya;Harigai Takakiyo;Adachi Hideaki;Fujii Eiji
分类号 H01L41/187;B32B9/00;G01C19/56;G01P3/02;H01L41/113;C23C14/08;H01L41/09;G01C19/5607 主分类号 H01L41/187
代理机构 McDermott Will & Emery LLP 代理人 McDermott Will & Emery LLP
主权项 1. A [(Na,Bi)1-xBax]TiO3 crystal piezoelectric film, wherein the [(Na,Bi)1-xBax]TiO3 crystal piezoelectric film has a (001) orientation only; the [(Na,Bi)1-xBax]TiO3 crystal piezoelectric film has an a-axis length of not less than 0.390 nanometers and not more than 0.395 nanometers; the [(Na,Bi)1-xBax]TiO3 crystal piezoelectric film has a c-axis length of not less than 0.399 nanometers and not more than 0.423 nanometers; x represents a value of not less than 0 and not more than 1; and the [(Na,Bi)1-xBax]TiO3 crystal piezoelectric film has a polarization-disappearance temperature of not less than 389 degrees Celsius.
地址 Osaka JP