发明名称 |
Silicon crystal and device and method for manufacturing same |
摘要 |
<p>A germanium melt layer is interposed between starting polycrystalline silicon (18) and silicon crystal (20) to be grown. The starting polycrystalline silicon (18) is recrystallized through the germanium melt layer (19), so that the incorporated quantity of germanium is 0.005-0.01 atoms/cm<3>. A holding means (10) for holding the starting polycrystalline silicon (18) and the germanium melt layer (19) is provided, a heater (17) for heating it is provided on the outside of the holding means (10), and the starting polycrystalline silicon (18) is crystallized again through the germanium melt layer (19) to grow the silicon crystal (20). <IMAGE></p> |
申请公布号 |
EP0882818(A1) |
申请公布日期 |
1998.12.09 |
申请号 |
EP19980110324 |
申请日期 |
1998.06.05 |
申请人 |
TOSHIBA CERAMICS CO., LTD.;JAPAN SCIENCE AND TECHNOLOGY CORPORATION;KOMATSU ELECTRONIC METALS CO., LTD;MITSUBISHI MATERIALS SILICON CORPORATION |
发明人 |
NAKANISHI, HIDEO;MAEDA, SUSUMU;ABE, KEISEI;TERASHIMA, KAZUTAKA |
分类号 |
C30B11/00;C30B15/00;(IPC1-7):C30B15/00;C30B29/06 |
主分类号 |
C30B11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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