METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A DEVICE FOR APPLYING SUCH A METHOD

摘要

The invention relates to a method and a device for manufacturing a deposition of a semiconductor layer on heated substrates on a support. The substrate is exposed to a gas comprising at least two reactive components. A first gas flow, including a first reactant, is supplied centrally above the support and directed towards it. A second gas flow, including a second reactant, is supplied from above symmetrically with respect to the center of the support from a larger distance from the support than the first gas flow. The first and second gas flows then flow sidewards across the support. The second gas flow is divided in n, n being greater or equal to two, separate gas sub-flows, which each supply 1/nth part of the second gas flow.