Method for manufacturing a semiconductor substrate, and method for manufacturing semiconductor devices integrated in a semiconductor substrate

摘要

A method of manufacturing a semiconductor substrate includes providing a semiconductor wafer having a first surface and a second surface opposite the first surface, and forming, when seen in a cross-section perpendicular to the first surface, cavities in the semiconductor wafer at a first distance from the first surface. The cavities are laterally spaced from each other by partition walls formed by semiconductor material of the wafer. The cavities form a separation region. The method further includes forming a semiconductor layer on the first surface of the semiconductor wafer, and breaking at least some of the partition walls by applying mechanical impact to the partition walls to split the semiconductor wafer along the separation region.

主权项

1. A method for manufacturing a semiconductor substrate, comprising:
providing a semiconductor wafer having a first surface and a second surface opposite the first surface; forming, when seen in a cross-section perpendicular to the first surface, cavities in the semiconductor wafer at a first distance from the first surface, the cavities being laterally spaced from each other by partition walls formed by semiconductor material of the wafer, the cavities forming a separation region; forming a semiconductor layer on the first surface of the semiconductor wafer; and breaking at least some of the partition walls by applying mechanical impact to the partition walls to split the semiconductor wafer along the separation region, wherein forming the cavities comprises:
forming a plurality of groups of closely spaced trenches in the first surface of the semiconductor wafer, the trenches extending at least to a depth from the first surface corresponding to the first distance; andtempering the semiconductor wafer at an elevated temperature in a deoxidising atmosphere to cause surface migration of the semiconductor material of the semiconductor wafer until the trenches of the respective groups of closely spaced trenches coalesce to respective cavities.