| 发明名称 | Silicon single crystal wafer, manufacturing method thereof and method of detecting defects | ||
| 摘要 | A silicon single crystal wafer is provided. The silicon single crystal wafer includes an IDP which is divided into an NiG region and an NIDP region, wherein the IDP region is a region where a Cu based defect is not detected, the NiG region is a region where an Ni based defect is detected and the NIPD region is a region where an Ni based defect is not detected. | ||
| 申请公布号 | US9406528(B2) | 申请公布日期 | 2016.08.02 |
| 申请号 | US201314028063 | 申请日期 | 2013.09.16 |
| 申请人 | LG SILTRON INCORPORATED | 发明人 | Sim Woo Young |
| 分类号 | H01L29/30;H01L21/00;H01L21/322;H01L29/32;C30B15/20;C30B29/06;C30B31/04 | 主分类号 | H01L29/30 |
| 代理机构 | KED & Associates, LLP | 代理人 | KED & Associates, LLP |
| 主权项 | 1. A silicon single crystal wafer comprising a VDP region having both a Cu based defect and a Ni based defect, an IDP region that is divided into a NiG region and an NIDP region surrounding the NiG region, wherein the NiG region has the Ni based defect and does not have the Cu based defect, and the NIDP region does not have the Ni based defect and does not have the Cu based defect. | ||
| 地址 | Gumi-Si KR | ||