Method for making interconnects and semiconductor structures using electrophoretic photoresist deposition

摘要

A method for electrophoretically depositing a layer of photoresist on a non-planar silicon structure and a method for forming a non-planar silicon structure using electrophoretic deposition are provided. The method comprises forming a silicon substrate with a non-planar topography and forming a conductive layer on the substrate. The substrate is then submerged in an electrolytic bath containing a photoresist solution comprising a polymer and a charged carrier group. At the same time the conductive layer is connected to a voltage source and to a non-sacrificial electrode and electrically biased. The biased conductive layer attracts the carrier group and causes a layer of photoresist to uniformly deposit on the conductive layer. The layer of photoresist can then be exposed and developed to form a photomask for etching the conductive layer. In an illustrative embodiment the silicon structure is an interconnect for testing unpackaged semiconductor dice. In another embodiment the silicon structure is a semiconductor structure having a dielectric layer formed on a non-planar topography and metal conductive lines formed on the dielectric layer.