发明名称 |
Method of separating wafers into individual die |
摘要 |
<p>A method of separating a wafer into individual die is disclosed. The wafer includes a substrate with organic thin-film multiple layers. A portion of the organic multiple layers is etched along a scribe line with excimer laser to form a groove to expose a portion of the substrate before sawing the substrate along the scribe line with a saw blade. Plasma etching or ion beam etching or sand blasting is an alternative to the excimer laser. <IMAGE></p> |
申请公布号 |
EP0818818(A1) |
申请公布日期 |
1998.01.14 |
申请号 |
EP19970111654 |
申请日期 |
1997.07.09 |
申请人 |
NEC CORPORATION |
发明人 |
ISHIDA, HISASHI |
分类号 |
H05K3/00;H01L21/301;H01L21/304;H01L21/78;H05K3/46;(IPC1-7):H01L21/78;H01L21/268 |
主分类号 |
H05K3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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