With respect to a module-type semiconductor device in which a plurality of IGBTs are incorporated in a package, highly reliable pressure contact type semiconductor device having improved heat dissipation performance and small internal wiring inductance comprises a plurality of IGBTs 1 incorporated and arranged in a flat package 3 of a hermetically sealed structure consisting of common electrode plates 3a and 3b exposed to top and bottom face sides, and an insulating outer frame 3c interposed between the common electrode plates to sealingly join those electrode plates. Contact terminal bodies 4 serving both as pressure members and as heat radiators are interposed between the top-face-side common electrode plate 3a and emitter electrodes of the respective IGBTs opposed thereto, and not only the emitter electrodes of the IGBTs and the common electrode 3a but also the collector electrodes and the bottom-face-side common electrode 3b are directly brought in pressure contact with each other. Gate electrodes of the respective IGBTs are connected to the exterior by being individually connected to a gate wiring conductor 6 that is provided on an inner wall of an insulating outer frame 3c by gate wire leads 7. <IMAGE>
