| 摘要 |
The present invention is related to a non-volatile memory cell, comprising a semiconductor substrate including a source region and a drain region with a channel region there between; a floating gate of a conductive material at least partially extending over a first portion of said channel region; a control gate of a conductive material and at least partially extending over a second portion of the channel region; an additional program gate of a conductive material and at least partially overlapping said floating gate and being capacitively coupled through a dielectric layer to said floating gate.
|
