发明名称 |
MICROSTRUCTURE, ESPECIALLY HETEROEPITAXIAL MICROSTRUCTURE, AND METHOD THEREFOR |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a more efficient method for manufacturing a microstructure having high crystal quality and high surface smoothness, especially a heteroepitaxial microstructure and to provide a high quality microstructure having a flat surface which can be efficiently manufactured. <P>SOLUTION: In the method for manufacturing the microstructure, especially the heteroepitaxial microstructure in which an epitaxial layer is formed on the surface of a carrier structure, the surface of the carrier structure is formed by splitting the carrier structure before forming the epitaxial layer. In addition, in the heteroepitaxial microstructure containing the carrier structure having the surface on which the microstructure, especially the epitaxial layer is formed, the surface is formed by splitting the carrier surface. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
申请公布号 |
JP2005047792(A) |
申请公布日期 |
2005.02.24 |
申请号 |
JP20040150941 |
申请日期 |
2004.05.20 |
申请人 |
SOI TEC SILICON ON INSULATOR TECHNOLOGIES |
发明人 |
FAURE BRUCE;LETERTRE FABRICE |
分类号 |
C30B25/18;C30B29/38;C30B29/52;C30B33/00;H01L21/20;H01L21/762;H01L21/8234;(IPC1-7):C30B25/18 |
主分类号 |
C30B25/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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