| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To prevent a defect from being transferred onto a wafer substrate, by reducing the thickness of an organic film for correcting an opening-like defect by treatment on a line even when performing a washing treatment at specified timing to suppress the variations in pattern line width after exposure, and by the decreased shielding capability in charged particle beams at the defect portion. <P>SOLUTION: In a charged particle beam transmission mask for exposure in which there is a correction place of the opening-like defect by the organic film; organic matters adhered to the mask for exposure by emitting charged particle beams for pattern transfer are removed from the mask for exposure by the washing treatment at the specified timing (S110), and the thickness of the organic film at the correction place of the opening-like defect is determined quantitatively each time when the washing treatment is made (S111). <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
