发明名称 |
TEMPERATURE CONTROL METHOD FOR PHOTOLITHOGRAPHIC SUBSTRATE |
摘要 |
The present invention provides a method for processing a photolithographic substrate, comprising the placement of the photolithographic substrate on a support member in a chamber wherein the photolithographic substrate has an initial temperature of about zero degrees Celsius to about fifty degrees Celsius. A heat transfer fluid is introduced into the chamber to cool the photolithographic substrate to a target temperature of less than about zero degrees Celsius to less than about minus forty degrees Celsius. The cooled photolithographic substrate is subjected to a plasma process before the temperature of the cooled photolithographic substrate reaches the initial temperature. |
申请公布号 |
WO2007143572(A1) |
申请公布日期 |
2007.12.13 |
申请号 |
WO2007US70252 |
申请日期 |
2007.06.01 |
申请人 |
OERLIKON USA, INC. |
发明人 |
PLUMHOFF, JASON;RYAN, LARRY;NOLAN, JOHN;JOHNSON, DAVID;WESTERMAN, RUSSELL |
分类号 |
H01J37/32;G03F1/08 |
主分类号 |
H01J37/32 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|