METHOD OF MANUFACTURING DIELECTRIC FILM IN CAPACITOR

摘要

A method for manufacturing a capacitor dielectric film is provided to supply large amount of reaction sources at the initial ALD(Automatic Layer Deposition) cycle by setting up the time for supplying a reaction gas of the initial ALD cycle longer than that of a latter ALD cycle. A lower part electrode(110) is formed on a semiconductor substrate(100). A first layer(121), a crystallization prevention layer(125) and a second layer(128) having the high-k are formed on the lower part electrode, as a capacitor dielectric layer(120). The first and the second layers are formed out of at least one selected from a group consisting of HfO2, ZrO2, TawO5, TiO2 and STO(STxBiyTiOx). The capacitor dielectric layer is formed by an ALD method, so as to be deposited uniformly on the surface of the lower part electrode which is formed three-dimensionally. And the capacitor dielectric is formed in a batch type ALD apparatus in which the plural wafers are processed collectively, so as to improve the throughput.