RESISTANCE CHANGE MEMORY

摘要

According to one embodiment, a resistance change memory includes a semiconductor layer having a first surface in a first direction and a second surface in a second direction crossing the first direction, extending in a third direction crossing the first and second directions, and having first and second portions, a gate electrode covering the first and second surfaces between the first and second portions, a first conductive line connected to the first portion, a resistance change element having first and second terminals, the first terminal connected to the second portion, a second conductive line connected to the second terminal, and a third conductive line connected to the gate electrode.

主权项

1. A resistance change memory comprising:
a first semiconductor layer having a first surface in a first direction and a second surface in a second direction crossing the first direction, extending in a third direction crossing the first and second directions, and having first and second portions; a first gate electrode covering the first and second surfaces between the first and second portions; a first conductive line connected to the first portion, and extending in a direction crossing the first and third directions; a first resistance change element having first and second terminals, the first terminal connected to the second portion; a second conductive line connected to the second terminal, and extending in a direction crossing the first and third directions; and a third conductive line connected to the first gate electrode, and extending in a direction crossing the first and second directions, wherein the first and second conductive lines are provided between the first semiconductor layer and the third conductive line.